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    Hydrogenation of thin Y-Ba-Cu-O films: Electrical transport and structure properties of YBa2Cu3O7 and YBa2Cu4O8

    G. Dortmann, J. Erxmeyer, S. Blässer, J. Steiger, T. Paatsch, and A. Weidinger

    H. Karl and B. Stritzker

    • Hahn-Meitner-Institut Berlin GmbH, Bereich Schwerionenphysik, Glienicker Strasse 100, D-14109 Berlin, Germany

    • Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, Germany

    Phys. Rev. B 49, 600 – Published 1 January, 1994

    DOI: https://doi.org/10.1103/PhysRevB.49.600

    Abstract

    c-axis-oriented YBa2Cu3O7 (1:2:3) and YBa2Cu4O8 (1:2:4) thin films were charged with hydrogen at 463 K and a H2 pressure of 100 mbar. The hydrogen concentrations and depth profiles were measured with the N15 nuclear reaction method. In contrast to earlier studies on bulk samples where a constant Tc,onset is reported, we find in our 1:2:3 films that the superconducting transition temperature decreases continuously with increasing hydrogen concentration and that the transitions remain relatively sharp, e.g., Tc,onset=38 K and ΔTc=6.2 K for [H]/cell≃0.6. The electrical resistivity and Hall-effect measurements in the normal state indicate that the main effect of hydrogen doping is a reduction of the charge carrier concentration, whereas the carrier mobility is not changed significantly. At an average hydrogen concentration of [H]/cell≃2 in both systems, a new hydride phase is observed, which for 1:2:3 is characterized by a c-axis expansion of 16% and for 1:2:4 by a c-axis expansion of 1.5%.

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