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    Electron scattering rate in epitaxial YBa2Cu3O7 superconducting films

    M. I. Flik, Z. M. Zhang, and K. E. Goodson

    M. P. Siegal and Julia M. Phillips

    • Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

    • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

    Phys. Rev. B 46, 5606 – Published 1 September, 1992

    DOI: https://doi.org/10.1103/PhysRevB.46.5606

    Abstract

    This work determines the electron scattering rate in the a-b plane of epitaxial YBa2Cu3O7 films using two techniques. Infrared spectroscopy yields the scattering rate at temperatures of 10, 78, and 300 K by fitting reflectance data using thin-film optics and a model for the free-carrier conductivity. The scattering rate is also obtained using kinetic theory and an extrapolation of normal-state electrical resistivity data to superconducting temperatures based on the Bloch theory for the phonon-limited electrical resistivity of metals. The scattering rates determined using both techniques are in agreement and show that the electron mean free path in the a-b plane of YBa2Cu3O7 superconducting films is three to four times the coherence length. Hence YBa2Cu3O7 is pure but not in the extreme pure limit. An average defect interaction range of 4 nm is obtained using the defect density resulting from flux-pinning considerations.

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