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    Dynamic study of conduction carriers in YBa2Cu3O7−δ thin films using a pulsed-laser-induced transient-thermoelectric-effect method

    M. Sasaki, G. X. Tai, S. Tamura, and M. Inoue

    • Department of Materials Science, Faculty of Science, Hiroshima University, Higashi-Hiroshima 724, Japan

    Phys. Rev. B 46, 1138 – Published 1 July, 1992

    DOI: https://doi.org/10.1103/PhysRevB.46.1138

    Abstract

    The pulsed-laser-induced transient thermoelectric effect (TTE) has been measured for c-axis-oriented YBa2Cu3O7−δ thin films over a wide time range (50 ns to 2 ms) and temperature range (10–300 K). The analysis of the decay curves of TTE voltages has revealed that the YBa2Cu3O7−δ system has multiple conduction carriers, the semiconducting holes in the one-dimensional (1D) CuO chains and two types of holes (light-mass and heavy-mass holes) arising from the metallic 2D CuO2-derived band. From the observed relaxation times for thermal diffusions of light and heavy holes, we have estimated their mobilities, which show a ‘‘critical slowing-down’’-like anomaly near the superconducting transition temperature Tc. The temperature dependence of the hole mobilities can be reasonably explained by considering a critical divergent nature of the diffusion coefficients for conduction holes and a ‘‘quasiparticle lifetime’’ τ* in the superconducting state. In the superconducting state we have observed the stepwise-, shunt-, and plateau-type TTE signals above and/or below a characteristic temperature Tc* (=35 K). The presence of Tc* is indicative of an additional superconducting transition from phase I to II of the quasiparticle system.

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