Dynamic study of conduction carriers in thin films using a pulsed-laser-induced transient-thermoelectric-effect method
Phys. Rev. B 46, 1138 – Published 1 July, 1992
DOI: https://doi.org/10.1103/PhysRevB.46.1138
Abstract
The pulsed-laser-induced transient thermoelectric effect (TTE) has been measured for c-axis-oriented thin films over a wide time range (50 ns to 2 ms) and temperature range (10–300 K). The analysis of the decay curves of TTE voltages has revealed that the system has multiple conduction carriers, the semiconducting holes in the one-dimensional (1D) CuO chains and two types of holes (light-mass and heavy-mass holes) arising from the metallic 2D -derived band. From the observed relaxation times for thermal diffusions of light and heavy holes, we have estimated their mobilities, which show a ‘‘critical slowing-down’’-like anomaly near the superconducting transition temperature . The temperature dependence of the hole mobilities can be reasonably explained by considering a critical divergent nature of the diffusion coefficients for conduction holes and a ‘‘quasiparticle lifetime’’ in the superconducting state. In the superconducting state we have observed the stepwise-, shunt-, and plateau-type TTE signals above and/or below a characteristic temperature (=35 K). The presence of is indicative of an additional superconducting transition from phase I to II of the quasiparticle system.