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  • Letter
  • Open Access

Topological blocking at the Bi(111) surface due to surface relaxation

Kazuki Koie1,2, Rikako Yaguchi1, and Yuki Fuseya1,2

Phys. Rev. B 111, L201303 – Published 15 May, 2025

DOI: https://doi.org/10.1103/PhysRevB.111.L201303

Abstract

The topological characteristics of Bi and its alloys with Sb have fueled intense debate since the prediction of three-dimensional topological insulators. However, a definitive resolution has not been reached to date. Here, we provide theoretical evidence that surface relaxation conceals the underlying bulk topology of pure Bi. Using density-functional-theory calculations for thin Bi(111) films (up to 17 bilayers), we first demonstrate a substantial interbilayer expansion near the surface. Motivated by this finding, we extend our analysis to thick Bi(111) films (up to 250 bilayers) incorporating relaxation layers, within the framework of a empirical tight-binding model with spin-orbit coupling. Our results reveal that these relaxation layers topologically block the emergence of a surface state and significantly suppress the one-particle spectrum of surface states at the M¯ point, thereby obscuring the experimental identification of Bi's topological properties. This phenomenon, which we term “topological blocking,” provides crucial insights into the long-standing difficulty of observing surface states of Bi(111) at the M¯ point. Furthermore, it establishes a framework for understanding and predicting the topological behavior in systems where surface relaxation disrupts the bulk-edge correspondence.

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References (51)

  1. L. Fu and C. L. Kane, Topological insulators with inversion symmetry, Phys. Rev. B 76, 045302 (2007).
  2. D. Hsieh, D. Qian, L. Wray, Y. Xia, Y. S. Hor, R. J. Cava, and M. Z. Hasan, A topological Dirac insulator in a quantum spin Hall phase, Nature (London) 452, 970 (2008).
  3. D. Hsieh, Y. Xia, L. Wray, D. Qian, A. Pal, J. H. Dil, J. Osterwalder, F. Meier, G. Bihlmayer, C. L. Kane, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Observation of unconventional quantum spin textures in topological insulators, Science 323, 919 (2009).
  4. T. Hirahara, Y. Sakamoto, Y. Saisyu, H. Miyazaki, S. Kimura, T. Okuda, I. Matsuda, S. Murakami, and S. Hasegawa, Topological metal at the surface of an ultrathin Bi1−xSbx alloy film, Phys. Rev. B 81, 165422 (2010).
  5. A. Nishide, A. A. Taskin, Y. Takeichi, T. Okuda, A. Kakizaki, T. Hirahara, K. Nakatsuji, F. Komori, Y. Ando, and I. Matsuda, Direct mapping of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator, Phys. Rev. B 81, 041309(R) (2010).
  6. H. Guo, K. Sugawara, A. Takayama, S. Souma, T. Sato, N. Satoh, A. Ohnishi, M. Kitaura, M. Sasaki, Q.-K. Xue, and T. Takahashi, Evolution of surface states in Bi1−xSbx alloys across the topological phase transition, Phys. Rev. B 83, 201104(R) (2011).
  7. F. Nakamura, Y. Kousa, A. A. Taskin, Y. Takeichi, A. Nishide, A. Kakizaki, M. D'Angelo, P. Lefevre, F. Bertran, A. Taleb-Ibrahimi, F. Komori, S.-I. Kimura, H. Kondo, Y. Ando, and I. Matsuda, Topological transition in Bi1−xSbx studied as a function of Sb doping, Phys. Rev. B 84, 235308 (2011).
  8. Y. Ohtsubo, L. Perfetti, M. O. Goerbig, P. L. Fevre, F. Bertran, and A. Taleb-Ibrahimi, Non-trivial surface-band dispersion on Bi(111), New J. Phys. 15, 033041 (2013).
  9. H. M. Benia, C. Straßer, K. Kern, and C. R. Ast, Surface band structure of Bi1−xSbx(111), Phys. Rev. B 91, 161406(R) (2015).
  10. S. Ito, B. Feng, M. Arita, A. Takayama, R.-Y. Liu, T. Someya, W.-C. Chen, T. Iimori, H. Namatame, M. Taniguchi, C.-M. Cheng, S.-J. Tang, F. Komori, K. Kobayashi, T.-C. Chiang, and I. Matsuda, Proving nontrivial topology of pure bismuth by quantum confinement, Phys. Rev. Lett. 117, 236402 (2016).
  11. Y. Ohtsubo and S. Kimura, Topological phase transition of single-crystal Bi based on empirical tight-binding calculations, New J. Phys. 18, 123015 (2016).
  12. Y. Fukushima, K. Kawaguchi, K. Kuroda, M. Ochi, M. Hirayama, R. Mori, H. Tanaka, A. Harasawa, T. Iimori, Z. Zhao, S. Tani, K. Yaji, S. Shin, F. Komori, Y. Kobayashi, and T. Kondo, Spin-polarized saddle points in the topological surface states of elemental bismuth revealed by pump-probe spin- and angle-resolved photoemission spectroscopy, Phys. Rev. B 110, L041401 (2024).
  13. J. C. Y. Teo, L. Fu, and C. L. Kane, Surface states and topological invariants in three-dimensional topological insulators: Application to Bi1−xSbx, Phys. Rev. B 78, 045426 (2008).
  14. H.-J. Zhang, C.-X. Liu, X.-L. Qi, X.-Y. Deng, X. Dai, S.-C. Zhang, and Z. Fang, Electronic structures and surface states of the topological insulator Bi1−xSbx, Phys. Rev. B 80, 085307 (2009).
  15. I. Aguilera, C. Friedrich, and S. Blügel, Electronic phase transitions of bismuth under strain from relativistic self-consistent GW calculations, Phys. Rev. B 91, 125129 (2015).
  16. Y. Fuseya and H. Fukuyama, Analytical solutions for the surface states of Bi1−xSbx, J. Phys. Soc. Jpn. 87, 044710 (2018).
  17. I. Aguilera, H.-J. Kim, C. Friedrich, G. Bihlmayer, and S. Blügel, Z2 topology of bismuth, Phys. Rev. Mater. 5, L091201 (2021).
  18. L. G. Ferreira, Relativistic band structure calculation for bismuth, J. Phys. Chem. Solids 28, 1891 (1967).
  19. L. G. Ferreira, Band structure calculation for bismuth: Comparison with experiment, J. Phys. Chem. Solids 29, 357 (1968).
  20. S. Golin, Band structure of bismuth: Pseudopotential approach, Phys. Rev. 166, 643 (1968).
  21. X. Gonze, J.-P. Michenaud, and J.-P. Vigneron, Ab initio calculations of bismuth properties, including spin-orbit coupling, Phys. Scr. 37, 785 (1988).
  22. X. Gonze, J.-P. Michenaud, and J.-P. Vigneron, First-principles study of As, Sb, and Bi electronic properties, Phys. Rev. B 41, 11827 (1990).
  23. A. B. Shick, J. B. Ketterson, D. L. Novikov, and A. J. Freeman, Electronic structure, phase stability, and semimetal-semiconductor transitions in Bi, Phys. Rev. B 60, 15484 (1999).
  24. I. Timrov, T. Kampfrath, J. Faure, N. Vast, C. R. Ast, C. Frischkorn, M. Wolf, P. Gava, and L. Perfetti, Thermalization of photoexcited carriers in bismuth investigated by time-resolved terahertz spectroscopy and ab initio calculations, Phys. Rev. B 85, 155139 (2012).
  25. B. Zhou, H.-Z. Lu, R.-L. Chu, S.-Q. Shen, and Q. Niu, Finite size effects on helical edge states in a quantum spin-Hall system, Phys. Rev. Lett. 101, 246807 (2008).
  26. J. Linder, T. Yokoyama, and A. Sudbø, Anomalous finite size effects on surface states in the topological insulator Bi2Se3, Phys. Rev. B 80, 205401 (2009).
  27. H.-Z. Lu, W.-Y. Shan, W. Yao, Q. Niu, and S.-Q. Shen, Massive Dirac fermions and spin physics in an ultrathin film of topological insulator, Phys. Rev. B 81, 115407 (2010).
  28. S.-Q. Shen, Topological Insulators (Springer, Berlin, 2012).
  29. H. Ozawa, A. Yamakage, M. Sato, and Y. Tanaka, Topological phase transition in a topological crystalline insulator induced by finite-size effects, Phys. Rev. B 90, 045309 (2014).
  30. F. Schindler, Z. Wang, M. G. Vergniory, A. M. Cook, A. Murani, S. Sengupta, A. Y. Kasumov, R. Deblock, S. Jeon, I. Drozdov, H. Bouchiat, S. Guéron, A. Yazdani, B. A. Bernevig, and T. Neupert, Higher-order topology in bismuth, Nat. Phys. 14, 918 (2018).
  31. L. Aggarwal, P. Zhu, T. L. Hughes, and V. Madhavan, Evidence for higher order topology in Bi and Bi0.92Sb0.08, Nat. Commun. 12, 4420 (2021).
  32. T. Hirahara, N. Fukui, T. Shirasawa, M. Yamada, M. Aitani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, and K. Kobayashi, Atomic and electronic structure of ultrathin Bi(111) films grown on Bi2Te3(111) substrates: Evidence for a strain-induced topological phase transition, Phys. Rev. Lett. 109, 227401 (2012).
  33. Y. Ohtsubo, Y. Yamashita, J. Kishi, S. Ideta, K. Tanaka, H. Yamane, J. E. Rault, P. L. Fèvre, F. Bertran, and S. Kimura, Temperature-driven modification of surface electronic structure on bismuth, a topological border material, J. Phys. D 52, 254002 (2019).
  34. H. L. Davis, J. B. Hannon, K. B. Ray, and E. W. Plummer, Anomalous interplanar expansion at the (0001) surface of Be, Phys. Rev. Lett. 68, 2632 (1992).
  35. G. te Velde and E. J. Baerends, Precise density-functional method for periodic structures, Phys. Rev. B 44, 7888 (1991).
  36. BAND 2021.1 (SCM, Theoretical Chemistry, Vrije Universiteit, Amsterdam, The Netherlands), https://www.scm.com/.
  37. E. Bitzek, P. Koskinen, F. Gähler, M. Moseler, and P. Gumbsch, Structural relaxation made simple, Phys. Rev. Lett. 97, 170201 (2006).
  38. J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996).
  39. E. van Lenthe, A. Ehlers, and E.-J. Baerends, Geometry optimizations in the zero order regular approximation for relativistic effects, J. Chem. Phys. 110, 8943 (1999).
  40. H. Mönig, J. Sun, Y. M. Koroteev, G. Bihlmayer, J. Wells, E. V. Chulkov, K. Pohl, and P. Hofmann, Structure of the (111) surface of bismuth: LEED analysis and first-principles calculations, Phys. Rev. B 72, 085410 (2005).
  41. P. Hofmann, The surfaces of bismuth: Structural and electronic properties, Prog. Surf. Sci. 81, 191 (2006).
  42. K. Saito, H. Sawahata, T. Komine, and T. Aono, Tight-binding theory of surface spin states on bismuth thin films, Phys. Rev. B 93, 041301(R) (2016).
  43. Y. Asaka, T. Kikuchi, and Y. Fuseya, Long-range permeation of wave function and superficial surface state due to strong quantum size effects in topological Bi/BiSb heterojunctions, Phys. Rev. B 106, 245303 (2022).
  44. See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevB.111.L201303 for more information on the band structure of Bi(111) films and the semimetal-semiconductor transition.
  45. Y. M. Koroteev, G. Bihlmayer, E. V. Chulkov, and S. Blügel, First-principles investigation of structural and electronic properties of ultrathin Bi films, Phys. Rev. B 77, 045428 (2008).
  46. Y. Liu and R. E. Allen, Electronic structure of the semimetals Bi and Sb, Phys. Rev. B 52, 1566 (1995).
  47. C. R. Ast and H. Höchst, Electronic structure of a bismuth bilayer, Phys. Rev. B 67, 113102 (2003).
  48. Y. M. Koroteev, G. Bihlmayer, J. E. Gayone, E. V. Chulkov, S. Blügel, P. M. Echenique, and P. Hofmann, Strong spin-orbit splitting on Bi surfaces, Phys. Rev. Lett. 93, 046403 (2004).
  49. T. Hirahara, T. Nagao, I. Matsuda, G. Bihlmayer, E. V. Chulkov, Y. M. Koroteev, P. M. Echenique, M. Saito, and S. Hasegawa, Role of spin-orbit coupling and hybridization effects in the electronic structure of ultrathin bi films, Phys. Rev. Lett. 97, 146803 (2006).
  50. K. Oura, M. Katayama, A. V. Zotov, V. G. Lifshits, and A. A. Saranin, Surface Science: An Introduction (Springer, Berlin, 2003).
  51. T. H. Hsieh, H. Lin, J. Liu, W. Duan, A. Bansil, and L. Fu, Topological crystalline insulators in the SnTe material class, Nat. Commun. 3, 982 (2012).

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