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  • Letter

Induced charge generated by a Coulomb impurity in transition metal dichalcogenides

V. K. Ivanov* and I. S. Terekhov†

  • School of Physics and Engineering, ITMO University, 197101 St. Petersburg, Russia

  • *Contact author: vladislav.ivanov@metalab.ifmo.ru
  • †Contact author: i.s.terekhov@gmail.com

Phys. Rev. B 110, L241404 – Published 9 December, 2024

DOI: https://doi.org/10.1103/PhysRevB.110.L241404

Abstract

We calculate analytically the charge density ρind(r) at small distances induced by a Coulomb impurity in two-dimensional transition-metal dichalcogenides. The calculations were performed exactly in the coupling constant. We found the first three leading terms of the charge-density asymptotics at small distances. Using this result, we demonstrate that the impurity with charge number Z=1 remains subcritical at any value of the coupling constant, whereas impurities with higher charge number could become supercritical at certain coupling constant values. Such a behavior is similar to that in graphene.

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