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  • Letter

Strong magnetoelectric coupling in a double transition metal dichalcogenide monolayer

Ziyang Qu1, Chengxi Huang1,*, Shihai Wu1, Fang Wu2, Jing Wang1, Kaiming Deng1, and Erjun Kan1,†

  • *Contact author: chuang@njust.edu.cn
  • †Contact author: ekan@njust.edu.cn

Phys. Rev. B 110, L161408 – Published 21 October, 2024

DOI: https://doi.org/10.1103/PhysRevB.110.L161408

Abstract

Magnetoelectric coupling is crucial for spintronic applications of multiferroic materials; however, it is usually rather weak. Here, we propose that strong magnetoelectric coupling could be realized by electrical control of structural phase transition and spin-lattice interaction. Our first-principles calculations reveal two inequivalent stable multiferroic phases (denoted as 2H and T″ phases) in a double transition metal dichalcogenide NbVS4 monolayer. The 2H phase is ferromagnetic, while the T″ phase is antiferromagnetic, and their in-plane ferroelectric polarizations are orthogonal. Therefore, a 90 ° rotation of the electric polarization is realizable by applying an electric field, which transforms the structural as well as the magnetic phases, leading to a strong magnetoelectric coupling. The emergence of such multistate multiferroicity with strong magnetoelectric coupling holds promising applications in high-density low-energy-dissipation memories.

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