We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer ${\mathrm{MoSe}}_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15 K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in ${\mathrm{MoSe}}_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$ factor and the spin relaxation time. The nonzero in-plane $g$ factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the ${\mathrm{MoSe}}_2$ layer.

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• Localization
• Spin dynamics
• Trions
• 2-dimensional systems
• Doped semiconductors
• Transition metal dichalcogenides
• Magneto-optical Kerr effect
• Pump-probe spectroscopy