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  • Letter
  • Open Access

Exchange-enhanced spin-orbit splitting and its density dependence for electrons in monolayer transition metal dichalcogenides

Igor Rozhansky* and Vladimir Fal'ko

  • *Contact author: igor.rozhanskiy@manchester.ac.uk
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Phys. Rev. B 110, L161404 – Published 15 October, 2024

DOI: https://doi.org/10.1103/PhysRevB.110.L161404

Abstract

We show that spin-orbit splitting (SOS) in monolayers of semiconducting transition metal dichalcogenides (TMDs) is substantially enhanced by an electron-electron interaction. This effect, similar to the exchange enhancement of the electron g factor, is most pronounced for conduction band electrons (in particular, in MoS2), and it has a nonmonotonic dependence on the carrier sheet density n. That is, the SOS enhancement is peaked at the onset of filling of the higher-energy spin-split band by electrons, n*, which also separates the regimes of slow (at n<n*) and fast (for n>n*) spin and valley relaxation of charge carriers. Moreover, this density itself is determined by the enhanced SOS value, making the account of exchange renormalization important for the analysis of the spintronic performance of field-effect transistors based on two-dimensional TMDs.

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Phys. Rev. B 110, L161404– Published 15 October, 2024
  • Received 15 July 2024
  • Revised 20 September 2024
  • Accepted 26 September 2024
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