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  • Letter
  • Open Access

Novel electronic structures from anomalous stackings in NbS2 and MoS2

Matthew D. Watson1,*, Mihir Date1,2, Alex Louat1, and Niels B. M. Schröter2

  • *Contact author: matthew.watson@diamond.ac.uk
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Phys. Rev. B 110, L121121 – Published 26 September, 2024

DOI: https://doi.org/10.1103/PhysRevB.110.L121121

Abstract

We show that in some transition metal dichalcogenides, minority regions of the cleaved sample surfaces show—unexpectedly and anomalously—a finite number of 2D electronic states instead of the expected 3D valence bands. In the case of NbS2, in addition to the typical spectrum associated with bulk 2Ha stacking, we also find minority regions with electronic structures consistent with few layers of 3R stacking. In MoS2, we find areas of both bulk 2Hc and 3R stackings, and regions exhibiting finite-layer quantization of both types. We further find evidence for a more exotic 4Ha stacking of MoS2, in which the valence band maximum is quasi-2D. The results highlight how variation of the interlayer stacking of van der Waals materials beyond the commonly reported bulk polytypes can yield novel electronic structures.

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Phys. Rev. B 110, L121121– Published 26 September, 2024
  • Received 20 June 2024
  • Revised 13 August 2024
  • Accepted 9 September 2024
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