Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of ${Ce}^2$/$h$, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption electronics and topological quantum computing. While the QAH effect with multiple chiral edge channels (i.e., C > 1) has been demonstrated in multilayers consisting of magnetic topological insulators and normal insulators, the channel number remains fixed for a given sample. Here, we unveil the tunability of the number of chiral edge channels within a single QAH insulator device. By tuning the magnetization of individual layers within the multilayer system, Chern insulating states with different Chern numbers are unveiled. The tunable Chern number was corroborated by our theoretical calculations. Furthermore, we conducted layer-dependent calculations to elucidate the contribution of the Chern number from different layers in the multilayer. Our findings demonstrate an extra degree of freedom in manipulating the chiral edge channels in QAH insulators. This tunability offers an extra dimension for the implementation of the QAH-based multichannel dissipationless transport.

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• Quantum anomalous Hall effect
• Quantum transport
• Topological insulators
• Molecular beam epitaxy