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Anisotropic optical conductivity accompanied by a small energy gap in the one-dimensional thermoelectric telluride Ta4SiTe4

Fumiya Matsunaga1, Yoshihiko Okamoto1,2,*, Yasunori Yokoyama1, Kanji Takehana3, Yasutaka Imanaka3, Yuto Nakamura1, Hideo Kishida1, Shoya Kawano4, Kazuyuki Matsuhira4 et al.

Koshi Takenaka1

  • 1Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
  • 2Institute for Solid State Physics, University of Tokyo, Kashiwanoha 5-1-5, Kashiwa 277–8581, Japan
  • 3National Institute for Materials Science (NIMS), Sakura 3–13, Tsukuba 305-0003, Japan
  • 4Graduate School of Engineering, Kyushu Institute of Technology, Kitakyushu 804–8550, Japan

  • *yokamoto@issp.u-tokyo.ac.jp

Phys. Rev. B 109, L161105 – Published 8 April, 2024

DOI: https://doi.org/10.1103/PhysRevB.109.L161105

Abstract

We investigated the optical properties of single crystals of one-dimensional van der Waals crystal Ta4SiTe4, which exhibited high thermoelectric performance below room temperature. Optical conductivity estimated from reflectivity spectra indicates the presence of a small energy gap of 0.1–0.15 eV at the Fermi energy. At the lowest energy, optical conductivity along the Ta4SiTe4 chain is an order of magnitude higher than that perpendicular to this direction, reflecting anisotropic electron conduction in Ta4SiTe4. These results suggest that the coexistence of a small band gap and moderate anisotropy in electron conduction is a promising strategy for developing high-performance thermoelectric materials for low-temperature applications.

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