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  • Letter

Electrically controllable topological magnetism in multiferroic antiferromagnetic PbVO3

Yonglong Ga1,2,4,*, Dongxing Yu1,5,*, Yong Li3,*, Jiawei Jiang2, Liming Wang1, Peng Li1, Jinghua Liang1, Hai Feng3, Youguo Shi3,4 et al.

Hongxin Yang1,2,4,6,†

  • 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 2National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • 3Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 4Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
  • 6Center for Quantum Matter and Device Applications, School of Physics, Zhejiang University, Hangzhou 31008, China

  • *These authors contributed equally to this work.
  • †hongxin.yang@zju.edu.cn

Phys. Rev. B 109, L060402 – Published 5 February, 2024

DOI: https://doi.org/10.1103/PhysRevB.109.L060402

Abstract

We propose to realize the nonvolatile four-state antiferromagnetic (AFM) skyrmions in multiferroic oxide system with underlying asymmetry. Subsequently, through strain-mediated magnetic phase engineering, we find that AFM skyrmions can be obtained in bulk PbVO3. Moreover, we also explore possible existence of AFM skyrmions in the SrTiO3/PbVO3 (PbTiO3/PbVO3) heterostructures via ab initio calculations, where AFM skyrmions can still survive. Eventually, we realize four-state AFM skyrmions (P↑,L↓), (P↑,L↑), (P↓,L↓), and (P↓,L↑) with different chirality induced by polarization (P) switching and polarity arising from magnetization (L) reversal in multiferroic PbVO3. In this letter, we provide an avenue toward electric-field control of AFM skyrmions in multiferroic oxides and offer perspectives for designing AFM skyrmion-based spintronic devices.

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