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Giant anisotropic band flattening in twisted Γ-valley semiconductor bilayers

Huan Wang1,*, Zhaochen Liu1,*, Yadong Jiang1, and Jing Wang1,2,3,†

  • 1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
  • 2Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 3Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China

  • *These two authors contributed equally to this work.
  • †Corresponding author: wjingphys@fudan.edu.cn

Phys. Rev. B 108, L201120 – Published 28 November, 2023

DOI: https://doi.org/10.1103/PhysRevB.108.L201120

Abstract

We propose a general theory of anisotropic band flattening in moiré systems at the Γ valley. For a two-dimensional semiconductor with a rectangular unit cell of C2z or mirror symmetries, we find that a larger effective mass anisotropy η=my/mx of the valence or conduction bands in the monolayer will have a stronger tendency to be further enhanced in its twisted bilayer. This gives rise to strong anisotropic band flattening and correlated physics in one dimension (1D) effectively. We predict twisted bilayer black phosphorus (tBBP) has giant anisotropic flattened moiré bands (η∼104) from ab initio calculations and the continuum model, where the low-energy physics is described by the weakly coupled array of 1D wires. We further calculate the phase diagram based on the sliding Luttinger liquid by including the screened Coulomb interactions in tBBP and find a large parameter space may host the non-Fermi liquid phase. We thus establish tBBP as a promising and experimentally accessible platform for exploring correlated physics in low dimensions.

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