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  • Letter

Tuning corner states in proximitized second-order topological insulators with bulk-boundary obstruction

Yang Xue1,*, Tong Zhou2,3, Wei Xu1, Bao Zhao4,5, Igor Žutić3, and Zhongqin Yang4,6

  • 1Department of Physics, East China University of Science and Technology, Shanghai 200237, China
  • 2Eastern Institute for Advanced Study, Eastern Institute of Technology, Ningbo, Zhejiang 315200, China
  • 3Department of Physics, University at Buffalo, State University of New York, Buffalo, New York 14260, USA
  • 4State Key Laboratory of Surface Physics and Key Laboratory of Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, China
  • 5Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252059, China
  • 6Shanghai Qi Zhi Institute, Shanghai 200030, China

  • *xuey@ecust.edu.cn

Phys. Rev. B 108, L161110 – Published 24 October, 2023

DOI: https://doi.org/10.1103/PhysRevB.108.L161110

Abstract

Second-order topological insulators (SOTIs) support topological states beyond the usual bulk-boundary correspondence and provide important connections between quantum chemistry and topology. A hallmark of the two-dimensional (2D) SOTIs is the emergence of corner states, which usually arise from the topologically nontrivial obstructed states in the bulk. In contrast, we reveal a very different scenario where even trivial obstructed bulk states can induce corner states due to their open boundaries. Remarkably, we show that these two types of corner states can coexist in a single system and predict, from first-principles calculations, that the monolayer C2N is a promising candidate for their observation. To overcome the limitation in manipulating corner states, we demonstrate it can be accomplished using a magnetic exchange field, where the corner states can be fully spin polarized and moved into the bulk states. Focusing on the example of the C2N/CrI3 van der Waals heterostructure, we put forth a class of proximitized materials which enable the versatile control of corner states through strain-controlled magnetic proximity effects. Our work reveals another type of topological state, and provides a universal proposal for topological corner state modulations and applications.

Physics Subject Headings (PhySH)

Corrections

5 March, 2024

Correction: Support information in the Acknowledgment section was incomplete and has been fixed.

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