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Piezoresistive effect in two-dimensional Dirac materials

D. S. Eliseev1,2, M. V. Boev1,2, V. M. Kovalev1,2, and I. G. Savenko3,4,5

  • 1Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
  • 2Novosibirsk State Technical University, Novosibirsk 630073, Russia
  • 3Department of Physics, Guangdong Technion–Israel Institute of Technology, 241 Daxue Road, Shantou, Guangdong 515063, China
  • 4Technion–Israel Institute of Technology, 32000 Haifa, Israel
  • 5Guangdong Provincial Key Laboratory of Materials and Technologies for Energy Conversion, Guangdong Technion–Israel Institute of Technology, Guangdong 515063, China

Phys. Rev. B 108, L121403 – Published 7 September, 2023

DOI: https://doi.org/10.1103/PhysRevB.108.L121403

Abstract

Applying the Bir-Picus ansatz for strain-induced corrections to the electron momentum scattering time on impurities in a transition metal dichalcogenide monolayer, and taking the parameters of MoS2 for our estimations, we derive general analytical expressions describing the piezoresistive effect, the strain-induced corrections to (longitudinal) Drude conductivity, linear magnetoresistance, and the Hall conductivity of the monolayer for an arbitrary dependence of electron momentum scattering time on its energy. We show that a two-band model, even with the account of the trigonal warping of electron valleys, should be revisited for the description of the piezoresistive effect in the case of strongly degenerate electrons. Therefore, we extend the two-band model by accounting for the deformation of higher-energy bands and derive general expressions describing strain-induced corrections to the kinematic coefficients of the monolayer. Thus, the developed approach allows to estimate the deformation constants of higher-energy bands.

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