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g-factor engineering with InAsSb alloys toward zero band gap limit

Yuxuan Jiang1,2,*, Maksim Ermolaev3, Seongphill Moon4,5, Gela Kipshidze3, Gregory Belenky3, Stefan Svensson6, Mykhaylo Ozerov4, Dmitry Smirnov4, Zhigang Jiang7,† et al.

Sergey Suchalkin3,‡

  • 1School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
  • 2Center of Free Electron Laser and High Magnetic Field, Anhui University, Hefei 230601, China
  • 3Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794, USA
  • 4National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
  • 5Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
  • 6U.S. Army Research Directorate, Adelphi, Maryland 20783, USA
  • 7School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

  • *yuxuan.jiang@ahu.edu.cn
  • †zhigang.jiang@physics.gatech.edu
  • ‡sergey.suchalkin@stonybrook.edu
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Phys. Rev. B 108, L121201 – Published 6 September, 2023

DOI: https://doi.org/10.1103/PhysRevB.108.L121201

Abstract

Band gap is known as an effective parameter for tuning the Landé g factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large g factor of g≈−90 at the minimum band gap of ∼0.1 eV, which is almost twice that in bulk InSb, is found. Further analysis to the zero gap limit reveals a possible gigantic g factor of g≈−200 with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a g-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide insights into realizing large g factors and spin-polarized states in semiconductors and topological materials.

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Phys. Rev. B 108, L121201– Published 6 September, 2023
  • Received 17 June 2023
  • Revised 4 August 2023
  • Accepted 23 August 2023
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