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  • Letter

Quenched charge density wave and large in-plane upper critical field of self-intercalated bilayer NbSe2

Yuguo Yin1, Chao-Sheng Lian2, Fanqi Meng3, Yaowu Liu1, Wei Chen1, Lichen Ji1, Xinyu Zhou1, Zichun Zhang1, Qinghua Zhang3 et al.

Lin Gu4, Wenhui Duan1, Qi-Kun Xue1,5, Xi Chen1,5, and Shuai-Hua Ji1,5,*

  • 1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
  • 2School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
  • 3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 4School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  • 5Frontier Science Center for Quantum Information, Beijing 100084, China

  • *shji@mail.tsinghua.edu.cn

Phys. Rev. B 108, L041405 – Published 21 July, 2023

DOI: https://doi.org/10.1103/PhysRevB.108.L041405

Abstract

Intercalation with extra atoms between atomic layers provides a new dimension to engineer transition metal dichalcogenide materials which show diverse many-body phenomena, such as charge density wave (CDW) and superconductivity. Here, we report the quenched CDW of 33.3% Nb-intercalated bilayer NbSe2 synthesized by the molecular beam epitaxy method. Our first-principles calculation shows that the absence of CDW in this self-intercalated ultrathin film is attributed to the strong valence bond and charge transfer between intercalated Nb and NbSe2 layers. Moreover, the large in-plane upper critical field beyond the Pauli limit of this thin film has been revealed by scanning tunneling spectroscopy. These findings not only deepen the understanding of the CDW and superconductivity of transition metal dichalcogenides, but also show a different approach to control the many-body electronic states which are potentially used for future electronics.

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