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Revealing temperature evolution of the Dirac band in ZrTe5 via magnetoinfrared spectroscopy

Yuxuan Jiang1,2,*, Tianhao Zhao3, Luojia Zhang3, Qiang Chen4, Haidong Zhou4, Mykhaylo Ozerov5, Dmitry Smirnov5, and Zhigang Jiang3,†

  • 1School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
  • 2Center of Free Electron Laser and High Magnetic Field, Anhui University, Hefei 230601, China
  • 3School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  • 4Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
  • 5National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA

  • *yuxuan.jiang@ahu.edu.cn
  • †zhigang.jiang@physics.gatech.edu

Phys. Rev. B 108, L041202 – Published 26 July, 2023

DOI: https://doi.org/10.1103/PhysRevB.108.L041202

Abstract

We report the temperature evolution of the Dirac band in semiconducting zirconium pentatelluride (ZrTe5) using magnetoinfrared spectroscopy. We find that the band gap is temperature independent at low temperatures and increases with temperature at elevated temperatures. Although such an observation seems to support a weak topological insulator phase at all temperatures and defy the previously reported topological phase transition (TPT) at an intermediate temperature in ZrTe5, we show that it is also possible to explain the observation by considering the effect of conduction-valence band mixing and band inversion with a strong topological insulator phase at low temperatures. Our work provides an alternative picture of the band gap evolution across TPT.

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