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Temperature-dependent full spectrum dielectric function of semiconductors from first principles

Zherui Han1, Changkyun Lee2, Jiawei Song3, Haiyan Wang3, Peter Bermel2, and Xiulin Ruan1,*

  • 1School of Mechanical Engineering and the Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907-2088, USA
  • 2School of Electrical and Computer Engineering and the Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907-2088, USA
  • 3School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907-2088, USA

  • *ruan@purdue.edu

Phys. Rev. B 107, L201202 – Published 30 May, 2023

DOI: https://doi.org/10.1103/PhysRevB.107.L201202

Abstract

From the ultraviolet to the mid-infrared region, light-matter interaction mechanisms in semiconductors progressively shift from electronic transitions to phononic resonances and are affected by temperature. Here, we present a unified temperature-dependent treatment of both electrons and phonons entirely from first principles, enabling the prediction of a full-spectrum dielectric function with CeO2 as the prototype material. At elevated temperatures, ab initio molecular dynamics is employed to find thermal perturbations to electronic structures and construct effective force constants describing potential energy surface. Four-phonon scattering and phonon renormalization are included in an integrated manner in this approach. Our first-principles-calculated refractive index of CeO2 agrees well with measured data from literature and our own temperature-dependent ellipsometer experiment.

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