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  • Letter

Realization in circuits of a Chern state with an arbitrary Chern number

Zhu Wang1,2,*, Yuanchuan Biao1,2,*, Xu-Tao Zeng3, Xiaoting Chen1,2, Xian-Lei Sheng3,4,†, Shengyuan A. Yang5,‡, and Rui Yu1,2,§

  • 1School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • 2Wuhan Institute of Quantum Technology, Wuhan 430206, China
  • 3School of Physics, Beihang University, Beijing 100191, China
  • 4Peng Huanwu Collaborative Center for Research and Education, Beihang University, Beijing 100191, China
  • 5Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore

  • *These authors contributed equally to this work.
  • †xlsheng@buaa.edu.cn
  • ‡shengyuan_yang@sutd.edu.sg
  • §yurui@whu.edu.cn
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Phys. Rev. B 107, L201101 – Published 3 May, 2023

DOI: https://doi.org/10.1103/PhysRevB.107.L201101

Abstract

The Chern insulator, as the most prominent topological state of matter, is characterized by the Chern number C, which in principle can take any integer values. So far, most realizations of the Chern insulator are limited to |C|=1, and achieving higher Chern numbers remains challenging. Here, we propose a general scheme to realize the Chern state with arbitrarily large Chern number in an electric circuit. Our proposal is based on the possibility of precise control on long-range couplings, which is a unique advantage of circuit systems. Besides simulations, we present an experimental demonstration of a C=3 state fabricated on a printed circuit board and directly image its topological chiral edge modes via AC sweep analysis. Our work opens a horizon for exploring exotic topological states of matter in classical systems.

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Phys. Rev. B 107, L201101– Published 3 May, 2023
  • Received 25 January 2023
  • Accepted 13 April 2023
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