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Surface anisotropic magnetoresistance in the antiferromagnetic semiconductor CrSb2

K. Nakagawa1, M. Kimata2, T. Yokouchi1, and Y. Shiomi1

  • 1Department of Basic Science, The University of Tokyo, Tokyo 153-8902, Japan
  • 2Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan

Phys. Rev. B 107, L180405 – Published 30 May, 2023

DOI: https://doi.org/10.1103/PhysRevB.107.L180405

Abstract

We report on large anisotropic magnetoresistance (AMR) in surface states of an antiferromagnetic semiconductor CrSb2. The low-temperature measurement of angle-dependent magnetoresistance (ADMR) is performed in high magnetic fields up to 24 T. At 1.4 K, where the surface conduction is dominant, ADMR exhibits clear twofold symmetry consistent with AMR due to magnetic-field-induced change of antiparallel magnetic structure. The AMR magnitude reaches 9.3% despite the small angle dependence of the net magnetic moments, suggesting strong spin-orbit interaction in the surface conduction layer.

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