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Understanding native defect induced photoluminescence in Zn2SnO4

Ngoc Linh Nguyen1,2,*, Hung The Dang1,3, Manh Trung Tran1, Nguyen Van Du4, Nguyen Tu4, Do Quang Trung4, Le Thi Thao Vien5, and Pham Thanh Huy1

  • 1Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Vietnam
  • 2PHENIKAA Research and Technology Institute (PRATI), A&A Green Phoenix Group JSC, No. 167 Hoang Ngan, Trung Hoa, Cau Giay, Hanoi 11313, Vietnam
  • 3Phenikaa Institute of Advanced Study (PIAS), Phenikaa University, Hanoi 12116, Vietnam
  • 4Faculty of Fundamental Sciences, Phenikaa University, Hanoi 12116, Vietnam
  • 5Natural Science Department, QuyNhon University, 170 An Duong Vuong, Quy Nhon, Binh Dinh 590000, Vietnam

  • *linh.nguyenngoc@phenikaa-uni.edu.vn

Phys. Rev. B 107, L060102 – Published 16 February, 2023

DOI: https://doi.org/10.1103/PhysRevB.107.L060102

Abstract

Simulation of photoluminescence spectroscopy from first principles provides a powerful approach for predicting the experimental spectrum and understanding the origin of the luminescence of materials. We show here that the use of the hybrid-exchange correlation functional combined with first-principles molecular dynamics can simulate the defect-induced photoluminescence spectrum of zinc stannate (Zn2SnO4) in good agreement with the experiment. The calculations were carried out for 12 different point defects of Zn2SnO4, and show that the green-to-red photoluminescence emissions obtained in the experiment are mainly contributed by the oxygen vacancy defects. These defect states play the roles of deep donors and radiative recombination centers during the photoluminescence mechanism. In particular, their electronic properties are significantly affected by temperature, which is related to the strong fluctuation of the nearest-neighbor Sn atoms relative to the vacancy center.

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