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Temperature dependence of the energy band gap in ZrTe5: Implications for the topological phase

I. Mohelsky1, J. Wyzula2, B. A. Piot1, G. D. Gu3, Q. Li3,4, A. Akrap2, and M. Orlita1,5,*

  • 1Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, INSA-T, Grenoble and Toulouse, France
  • 2Department of Physics, University of Fribourg, Chemin du Musée 3, 1700 Fribourg, Switzerland
  • 3Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973-5000, USA
  • 4Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, USA
  • 5Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Prague, 121 16, Czech Republic

  • *milan.orlita@lncmi.cnrs.fr

Phys. Rev. B 107, L041202 – Published 25 January, 2023

DOI: https://doi.org/10.1103/PhysRevB.107.L041202

Abstract

Using Landau-level spectroscopy, we determine the temperature dependence of the energy band gap in zirconium pentatelluride (ZrTe5). We find that the band gap reaches Eg=(5±1)meV at low temperatures and increases monotonically when the temperature is raised. This implies that ZrTe5 is a weak topological insulator, with noninverted ordering of electronic bands in the center of the Brillouin zone. Our magnetotransport experiments performed in parallel show that the resistivity anomaly in ZrTe5 is not connected with the temperature dependence of the band gap.

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