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  • Letter

Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6

Jing-Zhi Fang1,2,3,*, Hao-Nan Cui2,4,*, Shuo Wang2,5,6,*, Jing-Di Lu7,*, Guang-Yu Zhu2, Xin-Jie Liu2,8, Mao-Sen Qin2, Jian-Kun Wang2, Ze-Nan Wu2 et al.

Yan-Fei Wu8, Shou-Guo Wang8, Zhen-Sheng Zhang2,5,6, Zhongming Wei1,3,†, Jinxing Zhang7,‡, Ben-Chuan Lin2,5,6,§, Zhi-Min Liao2,4,#, and Dapeng Yu2,5,6

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
  • 5International Quantum Academy, Shenzhen 518048, China
  • 6Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 7Department of Physics, Beijing Normal University, Beijing 100875, China
  • 8Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

  • *These authors contributed equally to this work
  • †zmwei@semi.ac.cn
  • ‡jxzhang@bnu.edu.cn
  • §linbc@sustech.edu.cn
  • #liaozm@pku.edu.cn
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Phys. Rev. B 107, L041107 – Published 19 January, 2023

DOI: https://doi.org/10.1103/PhysRevB.107.L041107

Abstract

The exchange bias effect, namely the horizontal shift in the magnetic hysteretic loop, is known as a fundamentally and technologically important property of magnetic systems. Though the exchange bias effect has been widely observed in normal magnetic heterostructure, it is desirable to raise such pinning coupling in topology-based multilayer structure. Furthermore, the exchange bias effect was theoretically proposed to be able to further open the surface magnetization gap in the recently discovered intrinsic magnetic topological insulator MnBi2Te4. Such an exchange interaction can be ensured and programmed in the heterojunction, or applied to spintronics. Here we report the electrically tunable exchange bias in the van der Waals MnBi2Te4/Cr2Ge2Te6 heterostructure. The exchange bias emerges over a critical magnetic field and reaches the maximum value near the band gap. Moreover, the exchange bias is experienced by net ferromagnetic (FM) odd-layers MnBi2Te4 rather than the pure FM insulator Cr2Ge2Te6. Accompanied by nonlocal signal, an unfamiliar antisymmetric peak endows a domain-related structure within interface of the heterostructure. Such van der Waals heterostructure provides a promising platform to study the novel exchange bias effect and explore the possible application of spintronics or high−Tc quantum anomalous Hall effect.

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Phys. Rev. B 107, L041107– Published 19 January, 2023
  • Received 15 May 2022
  • Accepted 20 December 2022
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