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  • Letter

Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator

Yang Wang1,*, Binbin Liu2,*, Yue-Xin Huang3,*, Sivakumar V. Mambakkam4, Yong Wang4, Shengyuan A. Yang3, Xian-Lei Sheng2, Stephanie A. Law1,4, and John Q. Xiao1,†

  • 1Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA
  • 2School of Physics, Beihang University, Beijing 100191, China
  • 3Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
  • 4Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA

  • *These authors contributed equally.
  • †jqx@udel.edu
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Phys. Rev. B 106, L241401 – Published 7 December, 2022

DOI: https://doi.org/10.1103/PhysRevB.106.L241401

Abstract

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition-metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

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Phys. Rev. B 106, L241401– Published 7 December, 2022
  • Received 21 September 2022
  • Accepted 28 November 2022
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