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  • Letter

Nonlocal conductance spectroscopy of Andreev bound states in gate-defined InAs/Al nanowires

Andreas Pöschl1, Alisa Danilenko1, Deividas Sabonis1,2, Kaur Kristjuhan1, Tyler Lindemann3, Candice Thomas3, Michael J. Manfra3,4, and Charles M. Marcus1,*

  • 1Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
  • 2Laboratory for Solid State Physics, ETH Zürich, CH-8093 Zürich, Switzerland
  • 3Department of Physics and Astronomy, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
  • 4School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

  • *marcus@nbi.ku.dk
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Phys. Rev. B 106, L241301 – Published 12 December, 2022

DOI: https://doi.org/10.1103/PhysRevB.106.L241301

Abstract

The charge character of Andreev bound states (ABSs) in a three-terminal semiconductor-superconductor hybrid nanowire was measured using local and nonlocal tunneling spectroscopy. The device is fabricated using an epitaxial InAs/Al two-dimensional heterostructure with several gate-defined side probes. ABSs give rise to distinct local and nonlocal conductance signatures which evolve as a function of magnetic field and gate voltage. At high magnetic fields, ABSs are found to oscillate around zero as a function of gate voltage, with modifications of their charge consistent with expectations for the total Bardeen-Cooper-Schrieffer charge of ABSs.

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Phys. Rev. B 106, L241301– Published 12 December, 2022
  • Received 6 April 2022
  • Accepted 14 November 2022
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