The Hall effect that occurs when current flows through a CoFeB/MgO/NM ($\mathrm{NM}=\mathrm{Pt}$,Ta) tunnel junction is investigated. It is shown that the transverse voltage in NM electrodes is nonlinear on a DC voltage applied to the tunnel junction. It has both linear (odd) and quadratic (even) parts with respect to electric field. The linear part contains well-known contributions of the anomalous Hall effect in the ferromagnetic electrode, inverse spin-hall effect in NM, and others. The quadratic part is a phenomenon caused by the spin-orbit scattering of electrons in an external electric field induced by a voltage applied to the barrier. This field reaches values of ${10}^9$ V/m, which is close to internal atomic fields. The magnitude of both effects decreases as the thickness of the NM electrode is increased due to shunting effects.

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• Anomalous Hall effect
• Electrical spin injection
• Magnetotransport
• Spin-orbit coupling
• Multilayer thin films
• Tunnel junctions
• Ultrathin films
• Annealing
• Hall bar
• Lithography
• Plasma etching
• Sputtering