We report gate-induced enhancement of intrinsic charge rectification without p-n junctions in chiral semiconductor Te under magnetic field $B$. As gating shifts the chemical potential to the valence band maximum of Te, the charge rectification efficiency is enhanced hundredfold. By integrating model calculations, we attribute the charge rectification to the $B$-induced asymmetry of the chiral band structure. We also show that the carrier density subject to this asymmetry is augmented by a saddle-point structure near the valence band maximum, which further enhances the gate-tunable charge rectification together with its improved switchability and thermal robustness.

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• Magnetoresistance
• Spin-orbit coupling
• Spintronics
• Field-effect transistors
• Resistivity measurements