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Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot

Daniel N. Shanks1, Fateme Mahdikhanysarvejahany1, Michael R. Koehler2, David G. Mandrus3, Takashi Taniguchi4, Kenji Watanabe5, Brian J. LeRoy1, and John R. Schaibley1,*

  • 1Department of Physics, University of Arizona, 1118 East 4th Street, Tucson, Arizona 85721, USA
  • 2IAMM Diffraction Facility, Institute for Advanced Materials and Manufacturing, University of Tennessee, Knoxville, 2641 Osprey Vista Way, Knoxville, Tennessee 37920, USA
  • 3Department of Materials Science and Engineering, University of Tennessee, Knoxville, 1508 Middle Drive, Knoxville, Tennessee 37996, USA; Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, USA; and Department of Physics and Astronomy, University of Tennessee, Knoxville, 1408 Circle Drive, Knoxville, Tennessee 37996, USA
  • 4International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
  • 5Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

  • *johnschaibley@arizona.edu

Phys. Rev. B 106, L201401 – Published 3 November, 2022

DOI: https://doi.org/10.1103/PhysRevB.106.L201401

Abstract

Interlayer excitons (IXs) in two-dimensional semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single-exciton trapping for valleytronic applications. In this work, we use a nanopatterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blueshift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single-IX recombination.

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