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Anisotropic spin-to-charge conversion in bismuth

Hsia-Ling Liang1,*, T. C. Chuang1,*, Danru Qu2,3, C. C. Chiang1, Ming-Hao Lee2,3, Y. S. Chen2,3, Jauyn Grace Lin2,3, Ming-Wen Chu2,3, C. L. Chien1,4 et al.

Ssu-Yen Huang1,3,†

  • 1Department of Physics, National Taiwan University, Taipei 10617, Taiwan
  • 2Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
  • 3Center of Atomic Initiatives for New Materials, National Taiwan University, Taipei 10617, Taiwan
  • 4William H. Miller III Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA

  • *H.-L. Liang and T. C. Chuang contributed equally to this work.
  • †syhuang@phys.ntu.edu.tw

Phys. Rev. B 106, L201304 – Published 17 November, 2022

DOI: https://doi.org/10.1103/PhysRevB.106.L201304

Abstract

Many intriguing physical phenomena have emerged from the Bi-containing materials due to the interplay of band topology and strong spin-orbit coupling (SOC). In this work, we report anisotropic spin-to-charge conversion in Bi, a semimetal endowed with highly anisotropic Fermi surfaces in addition to strong SOC. The value of spin Hall angle θSH in Bi, that measures the spin-to-charge conversion efficiency, varies from θSH≈0 to θSH≈2.6% for two predominant crystal orientations. In addition, the propensity of oxidation and interface quality also affect the spin-to-charge conversion in Bi. The highly anisotropic spin-to-charge conversion between Bi(003) and Bi(012) provide significant insights into the exploration and development of Bi-based topological quantum materials and spintronics.

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