We investigate the integer quantum Hall effect in ${\mathrm{Cd}}_3{\mathrm{As}}_2$ thin films under conditions of strong to moderate quantum confinement (thicknesses of 10, 12, and 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor $\nu =1$) and at spin-degenerate higher index Landau levels with even filling factors ($\nu =2,4,6$). With increasing quantum confinement, we also observe a lifting of the Landau-level spin degeneracy at $\nu =3$, manifest as the emergence of an anomaly in the longitudinal and Hall resistivities. Tight-binding calculations show that the enhanced $g$ factor likely arises from a combination of quantum confinement and corrections from nearby subbands.

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• Edge states
• Electrical conductivity
• Landau levels
• Quantum Hall effect
• Quantum transport
• Topological materials
• Topological phases of matter
• Dirac semimetal
• Semimetals
• Molecular beam epitaxy
• Resistivity measurements
• Shubnikov-de Haas effect
• Tight-binding model