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Electrical control of spin-polarized topological currents in monolayer WTe2

Jose H. Garcia1, Jinxuan You1,2,3, Mónica García-Mota2, Peter Koval2, Pablo Ordejón1, Ramón Cuadrado1,4, Matthieu J. Verstraete5, Zeila Zanolli6, and Stephan Roche1,7

  • 1Catalan Institute of Nanoscience and Nanotechnology - ICN2, (CSIC and BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
  • 2Simune Atomistics S.L., Tolosa Hiribidea, 76, 20018 Donostia-San Sebastian, Spain
  • 3Department of Materials Science, Universitat Autónoma de Barcelona, Cerdanyola del Vallés, 08193 Bellaterra, Spain
  • 4School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ, United Kingdom
  • 5nanomat/QMAT/CESAM and European Theoretical Spectroscopy Facility Universite de Liege, Allee du 6 Aout 19 (B5a), 4000 Liege, Belgium
  • 6Department of Chemistry, Debye Institute for Nanomaterials Science, and ETSF, Utrecht University, The Netherlands
  • 7ICREA–Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain

Phys. Rev. B 106, L161410 – Published 21 October, 2022

DOI: https://doi.org/10.1103/PhysRevB.106.L161410

Abstract

We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. These findings suggest a new kind of gate-controllable spin-based device, topologically protected against disorder and of relevance for the development of topological spintronics.

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