Two recent experiments from Cornell University and Columbia University have reported insulator-to-metal transitions in two-dimensional (2D) moiré transition metal dichalcogenides (mTMDs) induced by doping around half filling, where the system is a Mott insulator. In this Letter, we consider the temperature-dependent resistivity of this metallic phase in the doped situation away from half filling, arguing that it arises from the strongly temperature-dependent 2D Friedel oscillations (i.e., finite momentum screening) associated with random quenched charged impurities, leading to the observed strongly increasing linear-in-$T$ resistivity in the metallic phase. Our theory appears to account for the temperature-dependent metallic resistivity for doping around half filling of the effective moiré TMD band, showing that temperature-dependent screened Coulomb disorder is an essential ingredient of doped 2D mTMD physics.

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• Electrical properties
• Metal-insulator transition
• Transport phenomena
• Transition metal dichalcogenides
• Boltzmann theory