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  • Letter

Effective out-of-plane g factor in strained-Ge/SiGe quantum dots

Andrew J. Miller*, Will J. Hardy, and Dwight R. Luhman

Mitchell Brickson and Andrew Baczewski

Chia-You Liu

Jiun-Yun Li

Michael P. Lilly and Tzu-Ming Lu

  • Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

  • Sandia National Laboratories, Albuquerque, New Mexico 87185, USA; Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA; and Center for Quantum Information and Control (CQuIC), Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131, USA

  • Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

  • Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan; Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan; Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan; Center for Quantum Science and Engineering, National Taiwan University, Taipei 10617, Taiwan; and Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan

  • Sandia National Laboratories, Albuquerque, New Mexico 87185, USA and Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA

  • *amille2@sandia.gov
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Phys. Rev. B 106, L121402 – Published 14 September, 2022

DOI: https://doi.org/10.1103/PhysRevB.106.L121402

Abstract

Lithographic quantum dots in strained-Ge/SiGe have rapidly progressed from the realization of a single-hole quantum dot to multiqubit devices. We present a measurement of the out-of-plane g factor for a single-hole quantum dot in this material. This experiment avoids the strong orbital effects present in the higher p-like orbitals in this configuration and validates the expected g-factor anisotropy. The results are in good agreement with calculations of the g factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, showing strong tunability through both the B field and the charge state.

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Phys. Rev. B 106, L121402– Published 14 September, 2022
  • Received 22 March 2021
  • Revised 28 April 2022
  • Accepted 15 August 2022
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