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Composite excitonic states in doped semiconductors

Dinh Van Tuan1 and Hanan Dery1,2,*

  • 1Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA
  • 2Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

  • *hanan.dery@rochester.edu

Phys. Rev. B 106, L081301 – Published 9 August, 2022

DOI: https://doi.org/10.1103/PhysRevB.106.L081301

Abstract

We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped monolayer (ML)-MoSe2 and ML-WSe2 due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly bound trion (two electrons and a valence-band hole) surrounded by a region depleted of electrons. The composite in ML-WSe2 further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea.

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See Also

Six-Body and Eight-Body Exciton States in Monolayer WSe2

Dinh Van Tuan, Su-Fei Shi, Xiaodong Xu, Scott A. Crooker, and Hanan Dery
Phys. Rev. Lett. 129, 076801 (2022)

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