- Letter
Composite excitonic states in doped semiconductors
Phys. Rev. B 106, L081301 – Published 9 August, 2022
DOI: https://doi.org/10.1103/PhysRevB.106.L081301
Abstract
We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped monolayer (ML)- and ML- due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly bound trion (two electrons and a valence-band hole) surrounded by a region depleted of electrons. The composite in ML- further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea.