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  • Letter

Closing the hybridization charge gap in the Kondo semiconductor SmB6 with an ultrahigh magnetic field

Daisuke Nakamura1,2,*, Atsushi Miyake1, Akihiko Ikeda1,3, Masashi Tokunaga1, Fumitoshi Iga4, and Yasuhiro H. Matsuda1,†

  • 1The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 2RIKEN Center for Emergent Matter Science (CEMS), Hirosawa, Wako, Saitama 351-0198, Japan
  • 3Department of Engineering Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
  • 4Institute of Quantum Beam Science, Ibaraki University, Mito, Ibaraki 310-8512, Japan

  • *daisuke.nakamura.rg@riken.jp
  • †ymatsuda@issp.u-tokyo.ac.jp

Phys. Rev. B 105, L241105 – Published 6 June, 2022

DOI: https://doi.org/10.1103/PhysRevB.105.L241105

Abstract

We have investigated the high-frequency magnetoresistance of Kondo semiconductor SmB6 under ultrahigh magnetic fields generated by the electromagnetic flux-compression technique. The semiconductor-metal transition due to closing of the hybridization charge gap was observed at approximately 180 T. The critical magnetic field observed is substantially higher than that reported previously. At temperatures below around 10 K, another transition was observed at a lower field (approximately 80 T). We suggest that the observed 80-T transition relates with the energy scale of quasiparticles such as the spin polaron in the in-gap state.

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