Twistronic heterostructures have recently emerged as a new class of quantum electronic materials with properties determined by the twist angle between the adjacent two-dimensional materials. Here, we study moiré superlattice minibands in graphene (G) encapsulated in hexagonal boron nitride (hBN) with an almost perfect alignment with both the top and bottom hBN crystals. We show that, for such an orientation of the unit cells of the hBN layers that locally breaks inversion symmetry of the graphene lattice, the hBN/G/hBN structure features a kagome network of topologically protected states with energies near the miniband edge, propagating along the lines separating the areas with different miniband Chern numbers.

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• Edge states
• Electrical conductivity
• Electronic structure
• Topological materials
• 2-dimensional systems
• Boron nitride
• Graphene
• Kagome lattice
• Two-dimensional electron system
• Band structure methods
• S-matrix method in transport