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  • Letter

Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

Mizuki Ohno1,2,3, Susumu Minami4, Yusuke Nakazawa1,2, Shin Sato1,2, Markus Kriener5, Ryotaro Arita1,5, Masashi Kawasaki1,2,5, and Masaki Uchida3,6,*

  • 1Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 2Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan
  • 3Department of Physics, Tokyo Institute of Technology, Tokyo 152-8550, Japan
  • 4Department of Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 5RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
  • 6PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0076, Japan

  • *Author to whom correspondence should be addressed: m.uchida@phys.titech.ac.jp
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Phys. Rev. B 105, L201101 – Published 2 May, 2022Erratum Phys. Rev. B 108, 239902 (2023)

DOI: https://doi.org/10.1103/PhysRevB.105.L201101

Abstract

A large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. The recently proposed magnetic Weyl semimetal EuCd2Sb2 provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-point-related band structure near the Fermi energy. Here, we report the fabrication of EuCd2Sb2 single-crystalline films and control of their anomalous Hall effect by a film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating a clear energy dependence of the intrinsic AHE.

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Erratum

Erratum: Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films [Phys. Rev. B 105, 201101 (2022)]

Mizuki Ohno, Susumu Minami, Yusuke Nakazawa, Shin Sato, Markus Kriener, Ryotaro Arita, Masashi Kawasaki, and Masaki Uchida
Phys. Rev. B 108, 239902 (2023)

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Phys. Rev. B 105, L201101– Published 2 May, 2022
  • Received 3 January 2022
  • Revised 15 March 2022
  • Accepted 25 April 2022
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