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Chiral electronic excitations in the quasi-two-dimensional Rashba system BiTeI

A. C. Lee1,*, B. Peng2, K. Du1,3, H.-H. Kung1, B. Monserrat2, S. W. Cheong1,3,4, C. J. Won4, and G. Blumberg1,5,†

  • 1Department of Physics & Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
  • 2Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 3Rutgers Center for Emergent Materials, Rutgers University, Piscataway, New Jersey 08854, USA
  • 4Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials, Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
  • 5National Institute of Chemical Physics and Biophysics, 12618 Tallinn, Estonia

  • *aclee314@physics.rutgers.edu
  • †girsh@physics.rutgers.edu

Phys. Rev. B 105, L161105 – Published 25 April, 2022

DOI: https://doi.org/10.1103/PhysRevB.105.L161105

Abstract

The optical transitions between spin-polarized bands of the quasi-two-dimensional Rashba system BiTeI are investigated using polarization-resolved resonant Raman spectroscopy. We detect chiral excitations between states with opposite helicity and compare spectra to calculations within a three-band model. Using the resonant Raman excitation profile, we deduce the Rashba parameters and band gaps of the higher conduction bands near the Fermi level, and compare the parameters to values obtained by ab initio density functional theory.

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