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  • Letter

Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime

Paul Anderson1,*, Yifan Huang2,*, Yuanjun Fan2, Sara Qubbaj1, Sinisa Coh3,†, Qin Zhou2,†, and Claudia Ojeda-Aristizabal1,†

  • 1Department of Physics and Astronomy, California State University Long Beach, Long Beach, California 90840, USA
  • 2Department of Mechanical and Materials Engineering, University of Nebraska, Lincoln, Nebraska 68588-0526, USA
  • 3Department of Mechanical Engineering and Materials Science and Engineering Program, University of California Riverside, Riverside, California 92521, USA

  • *These authors contributed equally to this work.
  • †Corresponding authors: Claudia.Ojeda-Aristizabal@csulb.edu; sinisacoh@gmail.com; zhouqin1983@gmail.com

Phys. Rev. B 105, L081408 – Published 14 February, 2022

DOI: https://doi.org/10.1103/PhysRevB.105.L081408

Abstract

Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defects in situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute indication of the in situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.

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