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Observation of topological edge states in the quantum spin Hall insulator Ta2Pd3Te5

Xuguang Wang1,4,*, Daiyu Geng1,4,*, Dayu Yan1,4,*, Wenqi Hu1,4,*, Hexu Zhang1,4, Shaosheng Yue1,4, Zhenyu Sun1,4, Shiv Kumar2, Eike F. Schwier2 et al.

Kenya Shimada2, Peng Cheng1,4, Lan Chen1,4,6, Simin Nie3, Zhijun Wang1,4, Youguo Shi1,4,5,6,†, Yi-Qi Zhang1,4, Kehui Wu1,4,6,‡, and Baojie Feng1,4,§

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
  • 3Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  • 4School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 6Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

  • *These authors contributed equally to this work.
  • †ygshi@iphy.ac.cn
  • ‡khwu@iphy.ac.cn
  • §bjfeng@iphy.ac.cn

Phys. Rev. B 104, L241408 – Published 22 December, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L241408

Abstract

Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a few materials, and thus, the search for new 2DTIs is at the forefront of physical and materials science. Here, we report experimental evidence of a 2DTI in the van der Waals material Ta2Pd3Te5. First-principles calculations show that each monolayer of Ta2Pd3Te5 is a 2DTI with weak interlayer interactions. Combined transport, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy measurements confirm the existence of a band gap at the Fermi level and topological edge states inside the gap. These results demonstrate that Ta2Pd3Te5 is a promising material for fabricating spintronic devices based on the QSH effect.

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