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Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime

N. Moreau1, B. Brun1, S. Somanchi2, K. Watanabe3, T. Taniguchi4, C. Stampfer2, and B. Hackens1

  • 1IMCN/NAPS, Université Catholique de Louvain (UCLouvain), B-1348 Louvain-la-Neuve, Belgium
  • 2JARA-FIT and 2nd Institute of Physics - RWTH Aachen 52074, Germany
  • 3Research Center for Functional Materials, National Institute for Materials Science, Namiki 305-0044, Japan
  • 4International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 305-0044, Japan

Phys. Rev. B 104, L201406 – Published 15 November, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L201406

Abstract

Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry.

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