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Metal-insulator transition in infinitesimally weakly disordered flat bands

Tilen Čadež*

Yeongjun Kim†, Alexei Andreanov‡, and Sergej Flach§

  • Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea

  • Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea and Basic Science Program, Korea University of Science and Technology (UST), Daejeon 34113, Republic of Korea

  • *tilencadez@ibs.re.kr
  • †yeongjun@ust.ac.kr
  • ‡aalexei@ibs.re.kr
  • §sflach@ibs.re.kr

Phys. Rev. B 104, L180201 – Published 15 November, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L180201

Abstract

We study the effect of infinitesimal onsite disorder on d-dimensional all bands flat lattices. The lattices are generated from diagonal Hamiltonians by a sequence of (d+1) local unitary transformations parametrized by angles θi. Without loss of generality, we consider the case of two flat bands separated by a finite gap, Δ. The perturbed states originating from the flat bands are described by an effective tight-binding network with finite on- and off-diagonal disorder strength which depends on the manifold angles θi. The original infinitesimal on-site disorder strength W is only affecting the overall scale of the effective Hamiltonian. Upon variation of the manifold angles for d=1 and d=2 we find that localization persists for any choice of local unitaries, and the localization length can be maximized for specific values of θi. Instead, in d=3 we identify a nonperturbative metal-insulator transition upon varying all bands' flat manifold angles.

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