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Homogeneous optical anisotropy in an ensemble of InGaAs quantum dots induced by strong enhancement of the heavy-hole band Landé parameter q

A. V. Trifonov1,2,*, I. A. Akimov1,3, L. E. Golub3, E. L. Ivchenko3, I. A. Yugova2, A. N. Kosarev1,3, S. E. Scholz4, C. Sgroi4, A. Ludwig4 et al.

A. D. Wieck4, D. R. Yakovlev1,3, and M. Bayer1,3

  • 1Experimentelle Physik 2, Technische Universität Dortmund, 44221 Dortmund, Germany
  • 2Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia
  • 3Ioffe Institute, Russian Academy of Science, 194021 St. Petersburg, Russia
  • 4Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany

  • *Author to whom correspondence should be addressed: artur.trifonov@tu-dortmund.de

Phys. Rev. B 104, L161405 – Published 18 October, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L161405

Abstract

We reveal the existence of a large in-plane heavy-hole g factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to the warping of valence-band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of the quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angular dependence of the trion photon echo signal on the direction of the external magnetic field with respect to the sample axes. It results in a uniform magnetic-field-induced optical anisotropy for the entire quantum dot ensemble which is a prerequisite for the realization of spin quantum memories and spin-photon entanglement in the ensemble.

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