An extremely large linear magnetoresistance (LMR) is a ubiquitous phenomenon emerging from topological Dirac and Weyl semimetals. However, the connection between an LMR and a nontrivial topology is under extensive debate. In this paper, by precisely controlling the thickness of ${\mathrm{SrNbO}}_3$ thin films grown on ${\mathrm{SrTiO}}_3$ substrates, we observe an LMR over a large carrier density range with a magnetoresistance as high as $150000\%$ at a carrier density $n\sim {10}^{21}{\mathrm{cm}}^{-3}$, far away from the quantum-limit regime. The temperature-, magnetic-field-, and carrier-density-dependent LMR in ${\mathrm{SrNbO}}_3/{\mathrm{SrTiO}}_3$ heterostructures provides compelling evidence of a mobility-driven LMR in coherent electronic systems. Our results uncover the general principle of an LMR and shed light on proper categorization of transport properties in topological and correlated materials.

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• Transport phenomena
• Heterostructures
• Topological materials
• Transition metal oxides