Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>p</mi><mtext>−</mtext><mi>Si</mi><mo>/</mo><mi>Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> interface

S. R. Ellis; N. C. Bartelt; F. Léonard; K. C. Celio; E. J. Fuller; D. R. Hughart; D. Garland; M. J. Marinella; J. R. Michael; D. W. Chandler; B. Liao; A. A. Talin

doi:10.1103/PhysRevB.104.L161303

Letter

Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried $p − Si / Si O_{2}$ interface

S. R. Ellis ¹, N. C. Bartelt¹, F. Léonard¹, K. C. Celio¹, E. J. Fuller¹, D. R. Hughart ², D. Garland ², M. J. Marinella², J. R. Michael ² et al.

D. W. Chandler¹, B. Liao ³, and A. A. Talin ^1,*

¹Sandia National Laboratories, Livermore, California 94550, USA
²Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
³Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA

^*aatalin@sandia.gov

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Phys. Rev. B 104, L161303 – Published 26 October, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L161303

Abstract

The understanding and control of charge carrier interactions with defects at buried insulator/semiconductor interfaces is essential for achieving optimum performance in modern electronics. Here, we report on the use of scanning ultrafast electron microscopy (SUEM) to remotely probe the dynamics of excited carriers at a Si surface buried below a thick thermal oxide. Our measurements illustrate a previously unidentified SUEM contrast mechanism, whereby optical modulation of the space-charge field in the semiconductor modulates the electric field in the thick oxide, thus affecting its secondary electron yield. By analyzing the SUEM contrast as a function of time and laser fluence we demonstrate the diffusion mediated capture of excited carriers by interfacial traps.

Physical Review B

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Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried $p − Si / Si O_{2}$ interface

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Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried p−Si/SiO2 interface

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Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried $p − Si / Si O_{2}$ interface