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Stability of even-denominator fractional quantum Hall states in systems with strong Landau-level mixing

Wenchen Luo1, Shenglin Peng2,1, Hao Wang3, Yu Zhou4,*, and Tapash Chakraborty5,6,†

  • 1School of Physics and Electronics, Central South University, Changsha 410083, China
  • 2School of Information Science and Technology, Northwest University, Xi'an 710127, China
  • 3Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 4Department of Physics, Jiangsu University of Science and Technology, Jiangsu 212003, China
  • 5Department of Physics, Brock University, St. Catharines, ON, Canada L2S 3A1
  • 6Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2

  • *yzhou@just.edu.cn
  • †Tapash.Chakraborty@Umanitoba.ca

Phys. Rev. B 104, L161302 – Published 11 October, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L161302

Abstract

Mixing of Landau levels has been understood to be essential in governing the nature of the ground state for the even-denominator fractional quantum Hall effect. The incompressibility of the ground state at filling factor 5/2 in the strong Landau-level-mixed systems, such as the ZnO quantum well, is not always stable. Here we present an approach to generally deal with this kind of system and satisfactorily explain the recent experiments [Falson et al., Sci. Adv. 4, eaat8742 (2018)] by implementing the screening plus the thickness effect. Further, the phase diagrams of the incompressibility of the ground state indicate that the phase transitions can be explicitly extracted by observing the lowest gap of the collective modes when the magnetic field and the width of the quantum well are tuned. We also predict the incompressibility of the two-dimensional electron gas in higher Landau levels in another strong Landau-level-mixed system, viz., the black phosphorene, by considering the screening effect where the relevant even-denominator fractional quantum Hall effects can possibly be observed.

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