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  • Letter

Time-frequency analysis of nonlinear terahertz signals due to hot electrons in the nonparabolic conduction bands of n-doped In0.57Ga0.43As films

C. M. Garcia-Rosas1, X. Chai1, X. Ropagnol1,2, and T. Ozaki1,*

  • 1Institut National de la Recherche Scientifique–Énergie Matériaux Télécommunications, 1650 boulevard Lionel Boulet, Varennes, Québec, Canada J3X 1S2
  • 2Electrical Engineering Department, École de Technologie Supérieure (ÉTS), 1100 rue Notre-Dame Ouest, Montréal, Québec, Canada H3C 1K3

  • *Author to whom correspondence should be addressed: Tsuneyuki.Ozaki@inrs.ca

Phys. Rev. B 104, L161201 – Published 4 October, 2021

DOI: https://doi.org/10.1103/PhysRevB.104.L161201

Abstract

In this Research Letter, we study the transient carrier dynamics and the nonlinear terahertz effects induced by an intense multicycle terahertz pulse in the n-doped semiconductor In0.57Ga0.43As. For incident terahertz pulses with relatively high frequency ≥1 THz, we reveal the generation of low- and high-frequency components in the transmitted intensity spectra. We study the time emission of these components at different frequencies using the Gábor transform, showing that the low- and high-frequency components are due to the nonparabolicity of the conduction band. Our results demonstrate that for a multicycle terahertz pulse, we generate a distorted biphasic truncated exponential current with the driving terahertz fields, leading to discrete high-order harmonic generation in the transmitted intensity spectra.

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