The carrier-density distribution near a conducting interface and the related band structure are topics of great contemporary importance in low-dimensional quantum solids. We propose a scheme, innovatively combining the spectroscopy techniques of photoluminescence and time-correlated single-photon counting with transport measurements of resistivity to unravel the carrier distribution, the shape of quantum well, energy subbands, and Fermi surfaces of the conducting interface of ${\mathrm{LaVO}}_3$ and ${\mathrm{SrTiO}}_3$. Electronic parameters, such as the carrier density, the mobility, estimated from the electrical measurements, are in remarkably good agreement with those extracted from the spectroscopy with theoretical modeling providing a bridge between the two sets of data analysis.

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• Carrier dynamics
• Carrier generation & recombination
• Hall effect
• Luminescence
• Photoinduced effect
• Laser ablation
• Photoluminescence
• Photon counting