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  • Letter
  • Open Access

Gate control, g factors, and spin-orbit energy of p-type GaSb nanowire quantum dot devices

Sven Dorsch1,*, In-Pyo Yeo1, Sebastian Lehmann1, Kimberly Dick1,2, Claes Thelander1, and Adam Burke1,†

  • 1Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
  • 2Center for Analysis and Synthesis, Lund University, Box 118, SE-221 00 Lund, Sweden

  • *sven.dorsch@ftf.lth.se
  • †adam.burke@ftf.lth.se
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Phys. Rev. B 103, L241411 – Published 30 June, 2021Erratum Phys. Rev. B 105, 119901 (2022)

DOI: https://doi.org/10.1103/PhysRevB.103.L241411

Abstract

Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large g factors and strong spin-orbit interaction. In this Letter, we study bottom-gated device architectures to realize single and serial multiquantum dot systems in Schottky-contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport properties of a single quantum dot induced by bottom gating and find large gate-voltage dependent variations of the g* factors up to 8.1±0.2 as well as spin-orbit energies between 110 and 230 μeV.

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Corrections

5 December, 2022

Correction: The copyright license statement was presented incorrectly and has been fixed.

Erratum

Erratum: Gate control, g factors, and spin-orbit energy of p-type GaSb nanowire quantum dot devices [Phys. Rev. B 103, L241411 (2021)]

Sven Dorsch, In-Pyo Yeo, Sebastian Lehmann, Kimberly Dick, Claes Thelander, and Adam Burke
Phys. Rev. B 105, 119901 (2022)

Article Text

Supplemental Material

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Outline

Information

Phys. Rev. B 103, L241411– Published 30 June, 2021
  • Received 6 April 2021
  • Accepted 17 June 2021
  • Corrected 5 December 2022
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